2N3019 TIN/LEAD

80V 1A 800MW TH TRANSISTOR-SMALL

Manufacturer: Central Semiconductor Corp Category: Single Bipolar Transistors Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
2N3019 TIN/LEAD
Encapsulation:
-
Package:
Box
Description:
80V 1A 800MW TH TRANSISTOR-SMALL

Product Parameters

Mounting Type Through Hole
Part Status Active
Grade -
Qualification -
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector Cutoff (Max) 10nA (ICBO)
Current - Collector (Ic) (Max) 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Frequency - Transition 100MHz
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Power - Max 800 mW
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Operating Temperature -65°C ~ 200°C (TJ)