BSS83IXUSA1

BSS83IXUSA1

Manufacturer: Infineon Technologies Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
BSS83IXUSA1
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
BSS83IXUSA1

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 34µA
Supplier Device Package PG-SOT23-3-U03
Current - Continuous Drain (Id) @ 25°C 320mA (Ta), 550mA (Tc)
Gate Charge (Qg) (Max) @ Vgs 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 72 pF @ 30 V
Power Dissipation (Max) 400mW (Ta), 1.04W (Tc)