CC-C2-B15-0322
SiC Power MOSFET 1200V 12A
Basic Information
- Part Number:
- CC-C2-B15-0322
- Encapsulation:
- -
- Package:
- Bulk
- Description:
- SiC Power MOSFET 1200V 12A
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 3.2V @ 5mA |
| Vgs (Max) | +15V, -5V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 10A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 200 V |