CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
Manufacturer:
Cambridge GaN Devices
Category:
Single FETs, MOSFETs
Quantity:
5739
RoHS Status:
Supported
Basic Information
- Part Number:
- CGD65B200S2-T13
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- 650V GAN HEMT, 200MOHM, DFN5X6.
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| FET Type | - |
| Supplier Device Package | 8-DFN (5x6) |
| Package / Case | 8-PowerVDFN |
| FET Feature | Current Sensing |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +20V, -1V |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |