CMS120N080B
SIC N-MOSFET,1200V,35A,TO-263-7L
Basic Information
- Part Number:
- CMS120N080B
- Encapsulation:
- -
- Package:
- Bulk
- Description:
- SIC N-MOSFET,1200V,35A,TO-263-7L
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Supplier Device Package | TO-263-7 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) | 188W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 10A, 20V |