DMT10H072LDV-13

MOSFET 2N-CH 100V 12A PWRDI3333

Manufacturer: Diodes Incorporated Category: FET, MOSFET Arrays Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
DMT10H072LDV-13
Encapsulation:
-
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 100V 12A PWRDI3333

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Configuration 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 3V @ 250µA
Package / Case 8-PowerVDFN
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Rds On (Max) @ Id, Vgs 66mOhm @ 4.5A, 10V
Supplier Device Package PowerDI3333-8 (Type UXC)
Power - Max 1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds 228pF @ 50V