DMT26M0LDG-13
MOSFET 2N-CH 25V 11.6A PWRDI3333
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- DMT26M0LDG-13
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Description:
- MOSFET 2N-CH 25V 11.6A PWRDI3333
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 25V |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Package / Case | 8-PowerVDFN |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA, 2.2V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15.9nC @ 10V, 57.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 13V, 4016pF @ 13V |
| Power - Max | 1.24W (Ta) |
| Supplier Device Package | PowerDI3333-8 (Type F) |