E3M0900170J-TR
SIC, MOSFET, 900M, 1700V, TO-263
Basic Information
- Part Number:
- E3M0900170J-TR
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- SIC, MOSFET, 900M, 1700V, TO-263
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Power Dissipation (Max) | 41W (Tc) |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Vgs (Max) | +19V, -8V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 15 V |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 1.99A, 15V |
| Vgs(th) (Max) @ Id | 4.2V @ 550µA |
| Input Capacitance (Ciss) (Max) @ Vds | 202 pF @ 1.2 kV |