F411MR12W3M1HB11BPSA1

F411MR12W3M1HB11BPSA1

Manufacturer: Infineon Technologies Category: FET, MOSFET Arrays Quantity: 1606 RoHS Status: Supported

Basic Information

Part Number:
F411MR12W3M1HB11BPSA1
Encapsulation:
-
Package:
Tray
Description:
F411MR12W3M1HB11BPSA1

Product Parameters

Part Status Active
Mounting Type Chassis Mount
Supplier Device Package -
FET Feature -
Grade -
Qualification -
Package / Case Module
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C 75A (Tj)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Configuration 4 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 800V
Rds On (Max) @ Id, Vgs 16mOhm @ 75A, 18V
Vgs(th) (Max) @ Id 5.15V @ 30mA
Gate Charge (Qg) (Max) @ Vgs 223nC @ 18V