FF06030Q

SICFET N-CH 650V 65A TO-247-4L

Manufacturer: fastSiC Category: Single FETs, MOSFETs Quantity: 1900 RoHS Status: Supported

Basic Information

Part Number:
FF06030Q
Encapsulation:
-
Package:
Tube
Description:
SICFET N-CH 650V 65A TO-247-4L

Product Parameters

Part Status Active
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type -
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Package / Case TO-247-4
Supplier Device Package TO-247-4L
Technology SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs (Max) +18V, -8V
Power Dissipation (Max) 202W (Tc)
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds 3015 pF @ 400 V
Vgs(th) (Max) @ Id 2.2V @ 40mA