FS17MR12W2M1HB11ABPSA2
FS17MR12W2M1HB11ABPSA2
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- FS17MR12W2M1HB11ABPSA2
- Encapsulation:
- -
- Package:
- Tray
- Description:
- FS17MR12W2M1HB11ABPSA2
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power - Max | - |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tj) |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 149nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 800V |
| Configuration | 6 N-Channel (Three Phase Inverter) |