G120P06T

MOSFET P-CH 60V -120A 277W TO-22

Manufacturer: Goford Semiconductor Category: Single FETs, MOSFETs Quantity: 1650 RoHS Status: Supported

Basic Information

Part Number:
G120P06T
Encapsulation:
-
Package:
Tube
Description:
MOSFET P-CH 60V -120A 277W TO-22

Product Parameters

Part Status Active
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
Operating Temperature -55°C ~ 150°C (TJ)
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOP
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Power Dissipation (Max) 277W (Tc)
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 12674 pF @ 30 V