G18NP06Y
MOSFET N/P-CH 60V 18A TO252-4
Manufacturer:
Goford Semiconductor
Category:
FET, MOSFET Arrays
Quantity:
4100
RoHS Status:
Supported
Basic Information
- Part Number:
- G18NP06Y
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Description:
- MOSFET N/P-CH 60V 18A TO252-4
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab) |
| Configuration | N and P-Channel, Common Drain |
| Supplier Device Package | TO-252-4 |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 25nC @ 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V |
| Power - Max | 45W (Tc), 50W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1446pF @ 30V, 2696pF @ 30V |