G3F34MT12K
1200V 34M TO-247-4 G3F SIC MOSFE
Manufacturer:
GeneSiC Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
2112
RoHS Status:
Supported
Basic Information
- Part Number:
- G3F34MT12K
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V 34M TO-247-4 G3F SIC MOSFE
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Power Dissipation (Max) | 263W (Tc) |
| Package / Case | TO-247-4 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Supplier Device Package | TO-247-4 |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 26A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 18mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2418 pF @ 800 V |