G3F60MT06J-TR

650V 55M TO-263-7 G3F SIC MOSFET

Manufacturer: GeneSiC Semiconductor Category: Single FETs, MOSFETs Quantity: 2186 RoHS Status: Supported

Basic Information

Part Number:
G3F60MT06J-TR
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
650V 55M TO-263-7 G3F SIC MOSFET

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-263-7
Power Dissipation (Max) 155W (Tc)
Technology SiC (Silicon Carbide Junction Transistor)
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 18 V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.3V @ 7mA
Input Capacitance (Ciss) (Max) @ Vds 1322 pF @ 400 V