GC210N80FE
MOSFET N-CH 800V ESD 17A 51W TO-
Manufacturer:
Goford Semiconductor
Category:
Single FETs, MOSFETs
Quantity:
1650
RoHS Status:
Supported
Basic Information
- Part Number:
- GC210N80FE
- Encapsulation:
- -
- Package:
- Tube
- Description:
- MOSFET N-CH 800V ESD 17A 51W TO-
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±30V |
| Supplier Device Package | 8-DFN (5x6) |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Package / Case | 8-PowerSMD, Flat Leads |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 8.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 380 V |