GCMX005A120S7B1

MOSFET 2N-CH 1200V 348A

Manufacturer: SemiQ Category: FET, MOSFET Arrays Quantity: 1607 RoHS Status: Supported

Basic Information

Part Number:
GCMX005A120S7B1
Encapsulation:
-
Package:
Tray
Description:
MOSFET 2N-CH 1200V 348A

Product Parameters

Part Status Active
Mounting Type Chassis Mount
Supplier Device Package -
FET Feature -
Grade -
Qualification -
Package / Case Module
Operating Temperature -40°C ~ 175°C (TJ)
Configuration 2 N-Channel (Half Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Power - Max 1.042kW (Tc)
Current - Continuous Drain (Id) @ 25°C 348A (Tc)
Rds On (Max) @ Id, Vgs 7mOhm @ 200A, 20V
Vgs(th) (Max) @ Id 4V @ 80mA
Gate Charge (Qg) (Max) @ Vgs 978nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 29300pF @ 800V