GCMX008C120S1-E1
GEN3 1200V 8M SIC MOSFET MODULE,
Basic Information
- Part Number:
- GCMX008C120S1-E1
- Encapsulation:
- -
- Package:
- Tube
- Description:
- GEN3 1200V 8M SIC MOSFET MODULE,
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 188A (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -8V |
| Power Dissipation (Max) | 536W (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 506 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14067 pF @ 1000 V |