GCMX010B120S1-E1
1200V, 10M SIC MOSFET MODULE, SO
Basic Information
- Part Number:
- GCMX010B120S1-E1
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V, 10M SIC MOSFET MODULE, SO
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Vgs (Max) | +25V, -10V |
| Power Dissipation (Max) | 652W (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 418 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10864 pF @ 1000 V |