GCMX040A120B2B1P

1200V, 40M SIC MOSFET HALF BRIDG

Manufacturer: SemiQ Category: FET, MOSFET Arrays Quantity: 1640 RoHS Status: Supported

Basic Information

Part Number:
GCMX040A120B2B1P
Encapsulation:
-
Package:
Box
Description:
1200V, 40M SIC MOSFET HALF BRIDG

Product Parameters

Part Status Active
Mounting Type Chassis Mount
Supplier Device Package -
FET Feature -
Grade -
Qualification -
Package / Case Module
Operating Temperature -40°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Vgs(th) (Max) @ Id 4V @ 10mA
Configuration 2 N-Channel (Half Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 800V
Power - Max 217W (Tc)
Gate Charge (Qg) (Max) @ Vgs 120nC @ 20V