GE04MPS06E-TR
DIODE SIL CARB 650V 12A TO2522
Manufacturer:
GeneSiC Semiconductor
Category:
Types of Rectifier Diodes
Quantity:
4145
RoHS Status:
Supported
Basic Information
- Part Number:
- GE04MPS06E-TR
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- DIODE SIL CARB 650V 12A TO2522
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Grade | - |
| Qualification | - |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Current - Average Rectified (Io) | 12A |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Supplier Device Package | TO-252-2 |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Capacitance @ Vr, F | 186pF @ 1V, 1MHz |