GE12047BCA3

MOSFET 2N-CH 1200V 475A

Manufacturer: GE Aerospace Category: FET, MOSFET Arrays Quantity: 1601 RoHS Status: Supported

Basic Information

Part Number:
GE12047BCA3
Encapsulation:
-
Package:
Box
Description:
MOSFET 2N-CH 1200V 475A

Product Parameters

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification AEC-Q101
Package / Case Module
Configuration 2 N-Channel (Dual)
Supplier Device Package Module
Power - Max 1250W
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 475A
Rds On (Max) @ Id, Vgs 4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs 1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 29300pF @ 600V