GE12050EEA3
MOSFET 6N-CH 1200V 475A MODULE
Basic Information
- Part Number:
- GE12050EEA3
- Encapsulation:
- -
- Package:
- Bulk
- Description:
- MOSFET 6N-CH 1200V 475A MODULE
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |
| Package / Case | Module |
| Supplier Device Package | Module |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Power - Max | 1250W |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 475A |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |