GE17045EEA3

SIC 6N-CH 1700V 425A MODULE

Manufacturer: GE Aerospace Category: FET, MOSFET Arrays Quantity: 1605 RoHS Status: Supported

Basic Information

Part Number:
GE17045EEA3
Encapsulation:
-
Package:
Bulk
Description:
SIC 6N-CH 1700V 425A MODULE

Product Parameters

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Qualification AEC-Q101
Package / Case Module
Supplier Device Package Module
Configuration 6 N-Channel (3-Phase Bridge)
Power - Max 1250W
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 425A (Tc)
Vgs(th) (Max) @ Id 4.5V @ 160mA
Rds On (Max) @ Id, Vgs 4.45mOhm @ 425A, 20V
Gate Charge (Qg) (Max) @ Vgs 1207nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 29100pF @ 900V