GE17140CEA3

SIC 2N-CH 1700V 1275A MODULE

Manufacturer: GE Aerospace Category: FET, MOSFET Arrays Quantity: 1605 RoHS Status: Supported

Basic Information

Part Number:
GE17140CEA3
Encapsulation:
-
Package:
Bulk
Description:
SIC 2N-CH 1700V 1275A MODULE

Product Parameters

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Qualification AEC-Q101
Package / Case Module
Supplier Device Package Module
Rds On (Max) @ Id, Vgs -
Configuration 2 N-Channel (Half Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Vgs(th) (Max) @ Id 4.5V @ 480mA
Power - Max 3.75kW
Current - Continuous Drain (Id) @ 25°C 1.275kA
Gate Charge (Qg) (Max) @ Vgs 3621nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 82nF @ 600V