GPIHV30SB5L

GANFET N-CH 1200V 30A TO263-5L

Manufacturer: GaNPower Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
GPIHV30SB5L
Encapsulation:
-
Package:
Tube
Description:
GANFET N-CH 1200V 30A TO263-5L

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) -
Package / Case Die
Supplier Device Package Die
Drain to Source Voltage (Vdss) 1200 V
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) 6V
Vgs (Max) +7.5V, -12V
Vgs(th) (Max) @ Id 1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 8.25 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds 236 pF @ 400 V