GT100P06D5

MOSFET P-CH 60V 60A 104W DFN5*6-

Manufacturer: Goford Semiconductor Category: Single FETs, MOSFETs Quantity: 1700 RoHS Status: Supported
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GT100P06D5

Basic Information

Part Number:
GT100P06D5
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
MOSFET P-CH 60V 60A 104W DFN5*6-

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 150°C (TJ)
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Power Dissipation (Max) 104W (Tc)
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Supplier Device Package 8-DFN (5x6)
Package / Case 8-PowerSMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 30 V