GT130N20M

MOSFET N-CH 200V 90A 250W TO-263

Manufacturer: Goford Semiconductor Category: Single FETs, MOSFETs Quantity: 1700 RoHS Status: Supported

Basic Information

Part Number:
GT130N20M
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 200V 90A 250W TO-263

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Supplier Device Package TO-263
Power Dissipation (Max) 250W (Tc)
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5860 pF @ 100 V