GT40WR21,Q

IGBT 1350V 40A TO-3P

Manufacturer: Toshiba Semiconductor and Storage Category: Single IGBTs Quantity: 1702 RoHS Status: Supported

Basic Information

Part Number:
GT40WR21,Q
Encapsulation:
-
Package:
Tray
Description:
IGBT 1350V 40A TO-3P

Product Parameters

Mounting Type Through Hole
Part Status Active
IGBT Type -
Current - Collector (Ic) (Max) 40 A
Input Type Standard
Test Condition -
Package / Case TO-3P-3, SC-65-3
Switching Energy -
Td (on/off) @ 25°C -
Operating Temperature 175°C (TJ)
Current - Collector Pulsed (Icm) 80 A
Supplier Device Package TO-3P(N)
Power - Max 375 W
Voltage - Collector Emitter Breakdown (Max) 1350 V
Vce(on) (Max) @ Vge, Ic 5.9V @ 15V, 40A