GT50JR22(STA1,E,S)

IGBT 600V 50A TO-3P

Manufacturer: Toshiba Semiconductor and Storage Category: Single IGBTs Quantity: 1623 RoHS Status: Supported

Basic Information

Part Number:
GT50JR22(STA1,E,S)
Encapsulation:
-
Package:
Tube
Description:
IGBT 600V 50A TO-3P

Product Parameters

Mounting Type Through Hole
Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Type Standard
Current - Collector (Ic) (Max) 50 A
Test Condition -
Package / Case TO-3P-3, SC-65-3
Switching Energy -
Td (on/off) @ 25°C -
Current - Collector Pulsed (Icm) 100 A
Operating Temperature 175°C (TJ)
Power - Max 230 W
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A