GT50N322A

IGBT 1000V 50A TO-3P

Manufacturer: Toshiba Semiconductor and Storage Category: Single IGBTs Quantity: 1609 RoHS Status: Supported

Basic Information

Part Number:
GT50N322A
Encapsulation:
-
Package:
Tray
Description:
IGBT 1000V 50A TO-3P

Product Parameters

Mounting Type Through Hole
Part Status Active
Operating Temperature 150°C (TJ)
IGBT Type -
Input Type Standard
Current - Collector (Ic) (Max) 50 A
Test Condition -
Package / Case TO-3P-3, SC-65-3
Switching Energy -
Td (on/off) @ 25°C -
Current - Collector Pulsed (Icm) 120 A
Voltage - Collector Emitter Breakdown (Max) 1000 V
Power - Max 156 W
Supplier Device Package TO-3P(N)
Reverse Recovery Time (trr) 800 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A