HT8KE6HTB1

100V 12.5A, DUAL NCH+NCH, HSMT8,

Manufacturer: ROHM Semiconductor Category: FET, MOSFET Arrays Quantity: 4600 RoHS Status: Supported

Basic Information

Part Number:
HT8KE6HTB1
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
100V 12.5A, DUAL NCH+NCH, HSMT8,

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Configuration 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 4V @ 1mA
Package / Case 8-PowerVDFN
Drain to Source Voltage (Vdss) 100V
Rds On (Max) @ Id, Vgs 60mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Supplier Device Package 8-HSMT (3.2x3)
Power - Max 2W (Ta), 14W (Tc)
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 12.5A (Tc)