HTNFET-D

MOSFET N-CH 55V 8CDIP

Manufacturer: Honeywell Aerospace Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
HTNFET-D
Encapsulation:
-
Package:
Bulk
Description:
MOSFET N-CH 55V 8CDIP

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Drive Voltage (Max Rds On, Min Rds On) 5V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C -
Vgs (Max) 10V
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
Power Dissipation (Max) 50W (Tj)
Operating Temperature -55°C ~ 225°C (TJ)
Supplier Device Package 8-CDIP-EP
Package / Case 8-CDIP Exposed Pad