IAUCN10S5L094DATMA1
MOSFET 2N-CH 100V 66A 8TDSON
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
5862
RoHS Status:
Supported
Basic Information
- Part Number:
- IAUCN10S5L094DATMA1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- MOSFET 2N-CH 100V 66A 8TDSON
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Configuration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 50V |
| Power - Max | 96W (Tc) |
| Supplier Device Package | PG-TDSON-8-60 |