ICPB1010-1-110I

DC-14 GHZ 50W DISCRETE GAN HEMT

Manufacturer: Microchip Technology Category: RF FETs, MOSFETs Quantity: 1610 RoHS Status: Supported

Basic Information

Part Number:
ICPB1010-1-110I
Encapsulation:
-
Package:
Box
Description:
DC-14 GHZ 50W DISCRETE GAN HEMT

Product Parameters

Part Status Active
Mounting Type Surface Mount
Configuration -
Current Rating (Amps) 4A
Noise Figure -
Package / Case Die
Supplier Device Package Die
Voltage - Rated 28 V
Voltage - Test 28 V
Current - Test 500 mA
Power - Output 50W
Gain 6.1dB
Technology GaN HEMT
Frequency 14GHz