ICPB2002-1-110I

DC-12 GHZ 12W DISCRETE GAN HEMT

Manufacturer: Microchip Technology Category: RF FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
ICPB2002-1-110I
Encapsulation:
-
Package:
Bulk
Description:
DC-12 GHZ 12W DISCRETE GAN HEMT

Product Parameters

Part Status Active
Mounting Type Surface Mount
Current Rating (Amps) 1A
Configuration -
Noise Figure -
Package / Case Die
Supplier Device Package Die
Voltage - Rated 28 V
Gain 10dB
Voltage - Test 28 V
Power - Output 12W
Frequency 12GHz
Current - Test 125 mA
Technology GaN HEMT