IDWD60G120C5XKSA1
SIC DISCRETE
Manufacturer:
Infineon Technologies
Category:
Types of Rectifier Diodes
Quantity:
1840
RoHS Status:
Supported
Basic Information
- Part Number:
- IDWD60G120C5XKSA1
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SIC DISCRETE
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| Grade | - |
| Qualification | - |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Package / Case | TO-247-2 |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Technology | SiC (Silicon Carbide) Schottky |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Supplier Device Package | PG-TO247-2-U01 |
| Current - Average Rectified (Io) | 153A |
| Current - Reverse Leakage @ Vr | 480 µA @ 1.2 kV |
| Capacitance @ Vr, F | 3580pF @ 1V, 100kHz |