IMSQ120R026M2HHXUMA1
SIC DISCRETE
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
2340
RoHS Status:
Supported
Basic Information
- Part Number:
- IMSQ120R026M2HHXUMA1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- SIC DISCRETE
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Configuration | 2 N-Channel (Half Bridge) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Power - Max | 410W (Tc) |