IMZA120R026M2HXKSA1
IMZA120R026M2HXKSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Quantity:
1600
RoHS Status:
Supported
Basic Information
- Part Number:
- IMZA120R026M2HXKSA1
- Encapsulation:
- -
- Package:
- Tube
- Description:
- IMZA120R026M2HXKSA1
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +23V, -7V |
| Supplier Device Package | PG-TO247-4-8 |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 800 V |
| Power Dissipation (Max) | 289W (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 27A, 18V |