IMZA120R034M2HXKSA1

IMZA120R034M2HXKSA1

Manufacturer: Infineon Technologies Category: Single FETs, MOSFETs Quantity: 1600 RoHS Status: Supported

Basic Information

Part Number:
IMZA120R034M2HXKSA1
Encapsulation:
-
Package:
Tube
Description:
IMZA120R034M2HXKSA1

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +23V, -7V
Supplier Device Package PG-TO247-4-8
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 18 V
Vgs(th) (Max) @ Id 5.1V @ 6.4mA
Input Capacitance (Ciss) (Max) @ Vds 1510 pF @ 800 V
Power Dissipation (Max) 244W (Tc)
Rds On (Max) @ Id, Vgs 45mOhm @ 20A, 18V