IRFB3607PBF
IRFB3607PBF is a 75V, 80A N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier). It features a maximum RDS(on) of 9mΩ at VGS = 10V and a TO-220AB through-hole package.
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Quantity:
2275
RoHS Status:
Supported
Basic Information
- Part Number:
- IRFB3607PBF
- Encapsulation:
- -
- Package:
- Tube
- Description:
- IRFB3607PBF is a 75V, 80A N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier). It features a maximum RDS(on) of 9mΩ at VGS = 10V and a TO-220AB through-hole package.
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Part Status | Not For New Designs |
| Drain to Source Voltage (Vdss) | 75 V |
| Power Dissipation (Max) | 140W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |