ISG0613N04NM6HSCATMA1
MOSFET 2N-CH 40V 42A 10WHITFN
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
4437
RoHS Status:
Supported
Basic Information
- Part Number:
- ISG0613N04NM6HSCATMA1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- MOSFET 2N-CH 40V 42A 10WHITFN
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 40V |
| Configuration | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 104nC @ 10V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 299A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 780µA |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 20V |