ISG0614N06NM5HATMA1
MOSFET 2N-CH 60V 31A 10VITFN
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
4504
RoHS Status:
Supported
Basic Information
- Part Number:
- ISG0614N06NM5HATMA1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- MOSFET 2N-CH 60V 31A 10VITFN
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Drain to Source Voltage (Vdss) | 60V |
| Configuration | 2 N-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| Package / Case | 10-PowerVDFN |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 233A (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 86µA |
| Gate Charge (Qg) (Max) @ Vgs | 102nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 30V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Supplier Device Package | PG-VITFN-10-1 |