ISG0616N10NM5HSCATMA1
MOSFET 2N-CH 100V 19A 10WHITFN
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Quantity:
3433
RoHS Status:
Supported
Basic Information
- Part Number:
- ISG0616N10NM5HSCATMA1
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Description:
- MOSFET 2N-CH 100V 19A 10WHITFN
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| Configuration | 2 N-Channel (Half Bridge) |
| Vgs(th) (Max) @ Id | 3.8V @ 85µA |
| Power - Max | 3W (Ta), 167W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 139A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 50V |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |