IV1Q12160T3
SIC MOSFET, 1200V 160MOHM, TO247
Basic Information
- Part Number:
- IV1Q12160T3
- Encapsulation:
- -
- Package:
- Tube
- Description:
- SIC MOSFET, 1200V 160MOHM, TO247
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Vgs(th) (Max) @ Id | 5V @ 1.9mA |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 134W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 895 pF @ 800 V |