IV2Q06025D7Z
GEN 2, SIC MOSFET, 650V 25MOHM,
Basic Information
- Part Number:
- IV2Q06025D7Z
- Encapsulation:
- -
- Package:
- Tube
- Description:
- GEN 2, SIC MOSFET, 650V 25MOHM,
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 650 V |
| Supplier Device Package | TO-263-7 |
| Power Dissipation (Max) | 600W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +20V, -5V |
| Current - Continuous Drain (Id) @ 25°C | 111A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 40A, 18V |
| Vgs(th) (Max) @ Id | 4.5V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 600 V |
| Package / Case | TO-263-7 |