IV2Q12160T4Z
GEN2, SIC MOSFET, 1200V 160MOHM,
Basic Information
- Part Number:
- IV2Q12160T4Z
- Encapsulation:
- -
- Package:
- Tube
- Description:
- GEN2, SIC MOSFET, 1200V 160MOHM,
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Power Dissipation (Max) | 136W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Supplier Device Package | TO-247-4 |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 5A, 18V |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 4.5V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 800 V |