IXSJ80N120R1
1200V 18M (30A @ 25C) SIC MOSFET
Basic Information
- Part Number:
- IXSJ80N120R1
- Encapsulation:
- -
- Package:
- Tube
- Description:
- 1200V 18M (30A @ 25C) SIC MOSFET
Product Parameters
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +21V, -4V |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 18 V |
| Supplier Device Package | ISO247-3L |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 40A, 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4522 pF @ 800 V |
| Power Dissipation (Max) | 266W |