MT3S111(TE85L,F)

RF TRANS NPN 6V 11.5GHZ S MINI

Manufacturer: Toshiba Semiconductor and Storage Category: Bipolar RF Transistors Quantity: 9895 RoHS Status: Supported

Basic Information

Part Number:
MT3S111(TE85L,F)
Encapsulation:
-
Package:
Cut Tape (CT)
Description:
RF TRANS NPN 6V 11.5GHZ S MINI

Product Parameters

Part Status Obsolete
Mounting Type Surface Mount
Transistor Type NPN
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C (TJ)
Current - Collector (Ic) (Max) 100mA
Power - Max 700mW
Voltage - Collector Emitter Breakdown (Max) 6V
Gain 12dB
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Supplier Device Package S-Mini
Frequency - Transition 11.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V