MT3S111TU,LF

RF TRANS NPN 6V 10GHZ UFM

Manufacturer: Toshiba Semiconductor and Storage Category: Bipolar RF Transistors Quantity: 13600 RoHS Status: Supported

Basic Information

Part Number:
MT3S111TU,LF
Encapsulation:
-
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 6V 10GHZ UFM

Product Parameters

Part Status Obsolete
Mounting Type Surface Mount
Transistor Type NPN
Operating Temperature 150°C (TJ)
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 10GHz
Voltage - Collector Emitter Breakdown (Max) 6V
Gain 12.5dB
Package / Case 3-SMD, Flat Leads
Power - Max 800mW
Supplier Device Package UFM
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz